| 摘要 |
PURPOSE:To reduce the number of progress of work, to prevent contamination and to fix the difference of threshold voltage of a semiconductor device by a method wherein a gate electrode formed of polycrystalline Si and a metal silicide formed by diffusing a metal from the upper part of polycrystlline Si thereof is provided. CONSTITUTION:At the MOS semiconductor IC, the gate electrode 8 is formed of polycrystalline Si and the metal silicide formed by diffusing the metal from the upper part of polycrystalline Si thereof. At this case, as the metal mentioned above, Al, Mo, W, etc., are used. As a result, reduction of the number of progress of work, prevention of contamination can be attained, and moreover the MOS transistor having the fixed difference of threshold voltage can be obtained, and is suitable to be used for a constant-voltage circuit. |
