Process for preparing monocrystalline or coarsely polycrystalline layers

摘要

A process for preparing monocrystalline or coarsely polycrystalline layers comprises layer growth, starting from a nucleus, on the cooling-down side of a high temperature zone which is passed through the polycrystalline layer. The layer growth can take place from a gas phase with silicon-containing molecules or by recrystallization of a solid phase. There are various possibilities for generating the high-temperature zone, for example by direct electron bombardment, inductive or direct heating.