| 摘要 |
PURPOSE:To prevent generation of gap between a substrate and a buried metal for wiring of a semiconductor integrated circuit device by a method wherein the first layer wiring is wired electrically through the buried metal, and the second layer wiring is formed on an insulating film provided on the surface of the buried metal. CONSTITUTION:The buried metal 32 consisting of an Au.Ge alloy and Ni is heated to be molten once, and is buried in the GaAs substrate completely. The wiring metals 31 are connected electrically through the buried metal 32. The SiO2 film is adhered thereon by the thermal decomposition method. Moreover the wiring metal is formed thereon using laminated metals of Cr, Pt, Au. Because the buried metal 32 is formed being molten once by this way, no gap is generated completely between the buried metal 32 and the GaAs substrate. |
