| 摘要 |
PURPOSE:To form a dielectric epitaxial film having excellent quality by growing the epitaxial film onto an Si single crystal substrate, changing an Si single crystal into SiO2 and shaping the active layer of the Si single crystal film onto the epitaxial film. CONSTITUTION:HCl Gas and Al and Ga are reacted, and AlCl3 and GaCl3 are formed. These compounds, MgCl2, H2 gas and CO2 gas are mixed, and reacted on a substrate crystal, and mixed spinel MgO.Al2-xGaxO3 is grown in epitaxial shape. The surface of the silicon single crystal substrate is thermally oxidized through the spinel epitaxial thin-film, and the SiO2 film is formed. An Si active layer is grown by utilizing the pyrolytic reaction of a SiH4-H2 system. |
