| 摘要 |
PURPOSE:To obtain a complementary MOS semiconductor element easily and moreover having high reliability by a method wherein polycrystlline Si is used as a mask for formation of source and drain. CONSTITUTION:Field oxide films 1, gate oxide films 2, polycrystalline Si gate electrodes 3, oxide films 9 formed by thermal oxidation of the gate electrodes, a polycrystalline Si layer 10 for mask formed on the films 9 thereof, the P<->-well 7 for formation of N channel, and an N type substrate 8 are provided respectively. The polycrystalline Si layer 10 is etched selectively, and ions are implanted to form a drain 11 and a source 12. The source and drain are formed without etching the gate oxide film after formation of the gate oxide film by this way, defect of air hole, etc., to be generated under the gate electrode by etching is not generated, and the high reliable semiconductor can be obtained easily. |
