| 发明名称 |
Semiconductor device and method of producing it |
| 摘要 |
A semiconductor device has a single continuous interconnection conductor layer (6) a predetermined area (61) of which is composed of a semiconductor material and the remaining area (62) of a metal compound of said semiconductor material. The predetermined area (61) of the interconnection conductor layer chiefly forms the gate electrode of a field-effect transistor.
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| 申请公布号 |
DE3223858(A1) |
申请公布日期 |
1983.01.13 |
| 申请号 |
DE19823223858 |
申请日期 |
1982.06.25 |
| 申请人 |
TOKYO SHIBAURA DENKI K.K. |
发明人 |
MIZUTANI,YOSHIHISA;KIMURA,MINORU |
| 分类号 |
H01L21/8238;H01L21/3205;H01L21/768;H01L23/52;H01L23/532;H01L27/092;H01L29/49;H01L29/78;(IPC1-7):01L23/52;01L29/78;01L29/40;01L21/90 |
主分类号 |
H01L21/8238 |
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