| 摘要 |
PURPOSE:To obtain the dark green color light emitting diode of a high luminous efficiency by a method wherein a P-N junction is formed in the Ga1-xAlxP crystal which was grown on a GaP crystal substrate, and the value of the ingredient coefficient x is set at 0.3. CONSTITUTION:An N type Ga1-xAlxP crystal 3 is grown on an N type crystal substrate 4 using a temperature difference liquid-phase growing method. Ga, At, GaP, S as in N type impurities and the like are used as the melting material for liquid-phase growth. Also, the quantative ratio of Ga and Al in melting material is determined by the value of an ingredient coefficient x. Then, the above is transformed into the melting material containing P type impurities, and P type Ga1-xAlxP crystal 2 is grown. Subsequently, an anodic electrode 1 and a cathodic electrode 5 are adhered. |
