发明名称 HIGH FREQUENCY CIRCUIT DEVICE
摘要 <p>PURPOSE:To reduce parasitic capacity and to make a device small-sized, by forming a recessed groove between conductive patterns which are adjacent to each other and in each different potential relation, and also, electrically shielding the part between the adjacent conductive patterns in the recessed groove. CONSTITUTION:On the surface of an insulating substrate 1 placed between conductive patterns 2', 2'', and 2', 2''', respectively, a recessed groove 6 is formed. Also, in the recessed groove 6, a shielding electric conductor layer 7 is provided, to which, for instance, the ground potential of the reverse side is provided through a through-hole 8 which passes through the substrate 1. Electrostatic capacity between the conductive patterns 2', 2'', and 2', 2''' is reduced since the inside of the recessed groove 6 is air, and accordingly, the electrostatic capacity between the conductive patterns can be reduced sufficiently.</p>
申请公布号 JPS585002(A) 申请公布日期 1983.01.12
申请号 JP19820069123 申请日期 1982.04.23
申请人 NIPPON DENKI KK 发明人 SANTOU SHIGERU;ANAZAWA SHINZOU;UENO SEIICHI
分类号 H01P1/00;H01P3/08 主分类号 H01P1/00
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