| 摘要 |
PURPOSE:To make it possible to remove a photoresist film from a substrate with only dry processing by a method wherein sputtering is carried out with pressure, power density and processing time being regulated, using a parallel-plate type device or reactive ion etching type device; and oxigen plasma removal is performed using a barrel type plasma device. CONSTITUTION:A pair of opposing electrodes 1 and 3 are placed in a chamber 5 forming a parallel plate type device or reactive ion etching device. Then a wafer 2, whose Al has been etched, is mounted on a electrode 3. An unnecessary photoresist is removed as follows. After the inside of the chamber 5 is turned into oxigen atmosphere, spattering is carried out for 0.5-5 minutes with a pressure of 0.5 Torr or less and a power density of 0.5W/cm<2> or more, so that a film can be readily removed. Then a barrel type device which has an oxygen atmosphere is used to perform the oxygen plasma processing, thus the film can be perfectly removed. |
