| 摘要 |
PURPOSE:To prevent the pattern shift of an alignment mark by growing poly Si only to the alignment mark section and utilizing a fact that the speed of growth has no directional dependency. CONSTITUTION:Openings 16 (the alignment mark), 22 are bored to SiO2 21 on P type Si 11, N<+> buried layers 12-1, 12-2 are formed and the surfaces are coated with SiO2 21. A resist mask 51 is shaped selectively onto the SiO2 21 of the mark 16 and the SiO2 is removed through etching, and the resist mask is taken off. SiH4 And a P compound are decomposed and reacted at a high temperature, and an N type gaseous-phase growing layer 13 is formed while poly Si 52 is shaped onto the SiO2 film 21 of the mark 16. The SiO2 21 may be replaced with Si3N4. According to this constitution, the pattern shift of the alignment mark used as the reference position of the formation of a pattern can be prevented in a gaseous-phase growing layer forming process. Consequently, an IC having the high degree of integration is obtained with high accuracy. |
