| 摘要 |
PURPOSE:To obtain the bipolar element of a minute buried electrode pattern by a method wherein a P-layer is formed to an N type Si layer coated with a SiO2 thin-film, an electrode window is bored, doped poly Si is stacked, an N emitter is shaped through thermal diffusion, Al is laminated, the surface is ground and the SiO2 film is removed selectively. CONSTITUTION:An N<+> layer 2 is buried to a P type Si substrate 1 and the N-epitaxial layer 3 is stacked, the layer 3 is isolated by V-shaped grooves 6, the grooves are coated with SiO2 7, and filled with poly Si 7, and SiO2 8 is attached onto the surfaces. The P-layer 9 is shaped, and the minute electrode windows 10-12 are formed to SiO2 4. Poly Si 15 not added is stacked and ions are implanted selectively, the N-emitter 16 and the N-connecting layer of the lower section of the window 10 are shaped, and a P-layer is molded under the window 12. When Al 17 is evaporated, Al is removed through plane grinding by SiO2 powder and water and the Poly Si 15 exposed is removed through melting, an electrode, the greater part thereof is buried into the SiO2 4 and width thereof is 1mum or shorter, is obtained, and the bipolar transistor, the necessary areas of wiring and the electrode thereof are remarkably small and which has the high degree of integration, is acquired. |
