| 摘要 |
PURPOSE:To improve luminous power conversion efficiency by evenness of current distribution in a light emitting zone by a method wherein after an N type semiconductor layer of island pattern is formed on a P type semiconductor layer, the P type layer is formed on the surface of an N type layer and a P<+> layer on the surface of the P type layer by diffusion process. CONSTITUTION:After an N type GaAs layer 31, an N type AlGaAs layer 32, a P type AlGaAs layer 33 and an N type GaAS layer 34 are formed successively, the layer 34 is selectively removed to produce the island pattern layer 34. Then, zinc diffusion is introduced from the surfaces of the layers 34, 33 to produce a P type layer 35a and P<+> layer 35b on the respective surfaces. Light can be emitted from the P-N junction between the layers 33, 32 as forward current is supplied between the P type electrode 36 and an N type electrode 37. At this moment, existence of the layer 35b causes the layer 33 to be approximately equipotential except for area right under the layer 34 so that current distribution in the light emitting zone can remain higher evenness, whereby luminous power conversion efficiency can be improved. |
