| 摘要 |
PURPOSE:To obtain the LED, color therefrom is green and luminous power conversion efficiency thereof is high, by limiting the impurity concentration of an N type Ga1-xAlxP crystal within a specified range. CONSTITUTION:An N type Ga1-xAlx crystal 3 is grown on an N type GaP crystal 4, and the P type Ga1-xAlxP crystal 2 is grown on the crystal 3. An anode electrode 1 and a cathode electrode 5 are attached to the diode. In the LED having this constitution, the quantity of the N type impurity of an N type Ga1-xAlxP region is limited to the value of the range of 2-14X10<16>/cm<3>. Accordingly, the LED emits light in the complete green band of high efficiency. |
