Method of laser annealing a subsurface region in a semiconductor.

摘要

A method for annealing an ion implanted region (14) buried in a semiconductor substrate (10) without the undesirable effects of thermal diffusion, which includes the radiation of the substrate by a continuous laser having an emission wavelength longer than 600 nm which the buried ion implanted region will absorb strongly but which will be substantially unabsorbed by the unimplanted regions.

Results can be improved when the substrate is heated to approximately 300°C during this laser annealing.