| 摘要 |
PURPOSE:To obtain the FET, structure thereof is simple and which has high output, by forming two independent semiconductor active layers onto a high resistivity layer and shaping a gate electrode contacting with both layers and source and drain electrodes in form that holds a channel and contacts with the active layers. CONSTITUTION:N Type GaAs 2 to which Si is added is grown onto a semi- insulating GaAs substrate 1, to which Cr is added, in epitaxial form, and the two active layers 2 are shaped through photoetching. The two source electrodes 3, 3' and drain electrodes 4, 4' ohmic-contacting are formed through the evaporation of an AuGe alloy, heat treatment in H2 and photoetching. The first and second gate electrodes 6 are molded through the evaporation of Al and photoetching. According to this constitution, the two active layers 2 are obtained through a conventional process, and the FET having output higher than one with one active layer is acquired. A dual gate FET is obtained without diversifying the arrangement of the electrodes in response to various performance, and this constitution is extremely effective for the reduction of cost. |
