Photomask

摘要

A photomask comprises a transparent film of conductive material and a light shielding film of predetermined pattern on a transparent substrate. The pattern film is made of a metallic element having its atomic number not smaller than 25 or a composition containing the metallic element. The photomask structure is suited to the case where the pattern formed on the mask is inspected with an electron beam. With the mask structure, the contrast of a pattern related information signal (backscattered electrons, secondary electrons, absorption current, etc.) derived from the mask upon irradiation thereof with the electron beam is improved.