发明名称 SUPPORTED DIAMOND
摘要 <p>Compacts are provided in which one or more single crystal diamonds, having a largest dimension of at least one millimeter, are embedded in the polycrystalline matrix which may be made of diamond; cubic boron nitride (CBN) ; and silicon and silicon carbide bonded diamond, CBN, or mixtures of diamond and CBN. The single crystal diamond is from 10-90 volume percent of the compact. The compacts (except for the silicon and silicon carbide variety) are made by high-pressure-high temperature processing generally in the range of 50 Kbar at 1300.degree.C to 85 Kbar at 1750.degree.C. They have application in several fields, for example, wire drawing die blanks, and anvils for high pressure apparatus.</p>
申请公布号 CA1139111(A) 申请公布日期 1983.01.11
申请号 CA19800358016 申请日期 1980.08.08
申请人 GENERAL ELECTRIC COMPANY 发明人 BOVENKERK, HAROLD P.;DEVRIES, ROBERT C.
分类号 C04B35/52;B01J3/06;B21C3/02;B23P5/00;B23P15/28;C01B31/06;(IPC1-7):24D3/16 主分类号 C04B35/52
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