| 摘要 |
PURPOSE:To increase the solubility of a cross-linking agent in a positive type photoresist by using novolak sulfonyl azide as the agent. CONSTITUTION:A positive type photoresist contg. novolak sulfonyl azide represented by the structural formula as a cross-linking agent is used in a photolithographic method. Since novolak sulfonyl azide is compatible with a resist such as polymethyl methacrylate or polybutene sulfur, it can be contained in the resist at high concn. and can enhance the accuracy of a pattern and the sensitivity of the resist. When novolak sulfonyl azide is added to a positive type photoresist with sensitivity to electron beams as a cross-linking agent, the dry etching resistance of the resist is also enhanced. |
