| 摘要 |
PURPOSE:To reduce unevenness in development by immersing positive resist films in a positive resist developer with an applied electric field to dissolve and remove the exposed regions of the films. CONSTITUTION:About 20-30 semiconductor substrates 17 each coated with an exposed positive resist film are vertically arranged on an alkali-proof substrate holder 18 made of quartz, ''Teflon '' or the like at about 1.5-2mm. distances (d), and the substrate 17, together with the holder 18, are immersed in the electric field region 16 of a positive resist developer 12 for a desired time to develop the resist films. During this time, it is preferable that the surfaces of the substrates 17 are at right angles to the surfaces of electrodes 13, 14. |
