发明名称 |
Semiconductor device |
摘要 |
A semiconductor device for comprising electrically alterable read-only memories formed in and on the same silicon substrate is disclosed. The read-only memories are driven by both a first voltage having one polarity and a second voltage having the opposite polarity. The first voltage is supplied from an external unipolar voltage source, but the second voltage is generated by a bipolar voltage generator which is located on the same silicon substrate and is driven by said external unipolar voltage source.
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申请公布号 |
US4368524(A) |
申请公布日期 |
1983.01.11 |
申请号 |
US19800170175 |
申请日期 |
1980.07.18 |
申请人 |
FUJITSU LIMITED |
发明人 |
NAKAMURA, KAZUHISA;ARAKAWA, HIDEKI |
分类号 |
H01L27/112;G05F3/20;G11C16/06;G11C16/30;G11C17/00;H01L21/761;H01L21/822;H01L21/8246;H01L21/8247;H01L27/04;H01L27/105;H01L27/12;H01L29/78;H01L29/788;H01L29/792;(IPC1-7):G11C7/00 |
主分类号 |
H01L27/112 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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