发明名称 MANUFACTURE OF HYBRID INTEGRATED CIRCUIT
摘要 <p>PURPOSE:To readily remove a Ti mask by etching a Ta series thin film formed on an insulating substrate with Ti as a mask, injecting pure water to clean the surface, and then heat treating it. CONSTITUTION:A Ta series thin film 2 is formed on an insulating substrate 1, an anodic oxidized film 4 is formed on the prescribed region, a Ta thin film 5 and a Ti film 6 for resistors are deposited on the overall surface, the Ti is then patterned with photoresist, the unnecessary part of the Ti thin film for resistor is removed with the patterned Ti as a mask, pure water is sprayed to remove the foreign material remaining on the surface, the Ti is oxidized by heat treatment, the oxidized Ti 8 is removed in a sulfuric acid boil, Cr or the like is then adhered, thereby forming an RC circuit. In this manner, the production of the Ti metal film remainder can be prevented by the resist residue, thereby eliminating the improper bonding of the external lead.</p>
申请公布号 JPS583257(A) 申请公布日期 1983.01.10
申请号 JP19810101927 申请日期 1981.06.30
申请人 NIPPON DENKI KK 发明人 SUDA YASUSHI
分类号 H01C17/06;H01G4/40;H01L21/70;H01L27/01 主分类号 H01C17/06
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