| 摘要 |
PURPOSE:To obtain a high quality GaAs element by implanting boron ions before or after the implantation of impurity ions in a GaAs crystal, thereby reducing the production of a defect in the crystal at a high temperature. CONSTITUTION:Boron ions 5 are implanted in a GaAs wafer 6, selenium ions 8 are implanted from above a boron implanted layer 7, an AlN film 10 is formed by a reactive sputtering method on a selenium and boron implanted layer 9, and is heat treated. In this manner, a stress applied to a GaAs crystal can be alleviated, and a crystal defect which directly affects the crystal or an exfoliation or the AlN film or a production of a thermal pit can be reduced. |
