| 摘要 |
PURPOSE:To improve the integration of a vertical type capacitor by forming a dielectric layer on the surface of a groove formed by a vertical ion beam etching method and forming a conductive layer in the groove, thereby forming the capacitor and flattening the surface of a substrate. CONSTITUTION:A mask 3 made of an insulating layer such as SiO2 or the like is formed on the surface of an Si substrate 4, a deep groove extending vertically is formed by vertical on etching method utilizing Ar ions or the like, the surface of the groove is then oxidized to form an SiO2 film 7, a conductive layer 9 made of Mo or the like is formed by a CVD method in the groove as one electrode of a vertical capacitor. In this manner, the integration can be improved, and the semiconductor substrate can be flattened. |
