| 摘要 |
PURPOSE:To form a stable film by a method wherein the whole range conveying substrates is formed to be inert gas atmosphere in a continuous CVD device. CONSTITUTION:In a continuous CVD device conveying semiconductor substrates 13 mounted on a conveyor 12 moving in the arrow a direction under a gas nozzle 11 gushing mixed gas such as SiH4, dopant gas downwards, the whole range conveying the substrates 13 is covered with an external cover 15 at around the internal cover 14 covering the circumference of the nozzle 11 and the inside is formed to be inert gas (for example, N2) atmosphere. This forms the same gas atmosphere at the opposite end sections (A), (B) and the central section (C) of the nozzle 11 and almost equalizes the quality of films formed on the substrates 13. |
