发明名称 MULTILAYER STRUCTURE AND MANUFACTURE THEREOF
摘要 PURPOSE:To obtain an insulator layer having excellently flat surface and high reliability by forming the interlayer insulator layer of multilayer wires of an insulating material hardened under the specific conditions from a polymer of specific silicon monomer. CONSTITUTION:An interlayer insulator layer of multilayer wires is composed of a mixture of polymer of monomer represented by the formulaeIand II, where R signifies methyl, ethyl, vinyl or phenyl group, and X signifies a halogen, hydroxy or ethoxy group, or an insulating material hardened at a temperature higher than 450 deg.C in an oxidative atmopsphere including oxygen from copolymer of both the monomers. For example, a solution mixed with a mixture of methylphenylpolysilsesquioxane and polydialkoxysilane and methylcellosolve acetate is coated on a metallic wiring layer to form a resin film, which is heated at approx. 500 deg.C in the air, thereby forming an inorganic insulator layer.
申请公布号 JPS583249(A) 申请公布日期 1983.01.10
申请号 JP19810100511 申请日期 1981.06.30
申请人 FUJITSU KK 发明人 TAKEDA SHIROU;KITAKOUJI TOSHISUKE;MURAKAWA KIYOUHEI;NAKAJIMA MINORU
分类号 H01L21/768;H01L21/312;H01L23/522 主分类号 H01L21/768
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