| 摘要 |
PURPOSE:To enhance the reliability of a semiconductor integrated circuit device by reducing the thickness of a lower layer wiring electrode of a multilayer wiring structure, thereby eliminating a trouble such as disconnection of a wire and facilitating ultrafine processing of a wiring electrode having more than the second layers. CONSTITUTION:The first layer electrode wire 8 on an insulating film 7 on a silicon substrate 6 is formed at approx. 2,000Angstrom thick, and the second layer electrode wire 10 formed thereon through an interlayer insulating film 9 is formed at approx. 5,000Angstrom , thereby reducing the stepwise difference on the first wire 8 and preventing the disconnection of the second layer wire 10 due to the stepwise difference. |
