| 摘要 |
PURPOSE:To eliminate remaining pillar etching by a method wherein the whole surface of a film is oxidized before forming a mask pattern in processing the film on a semiconductor substrate by a reactive ion etching method and the grown oxide film is removed. CONSTITUTION:An SiO2 film 2 is formed on an Si substrate 1 and then an Si3N4 film 3 is formed. Next, as a pretreatment process, plasma oxidation is applied to the whole part of a substrate by an O2 pressure of 1 Torr, an RF power of 200W, for example. Next, the substrate is immersed in a solution of HF 10% for 20sec to remove the grown oxide film. After that, an etching pattern 4 is formed by photoresist and the film 3 is etched by reactive ion beam etching by silicon gas tetrafluoride. |
