发明名称 METHOD AND DEVICE FOR FORMING FILM BY SPUTTERING
摘要 PURPOSE:To make the distributions of deposited film thicknesses uniform by flowing electric currents of prescribed periods to electromagnets, and changing the magnetic induction forces energized in the inside and outside electromagnet coils thereby moving the place for generation of plasma rings. CONSTITUTION:A packing plate 22 to serve as the cathode is provided to a target flat plate 21, and a magnetic field generating yoke 23 for generating prescribed magnetic flux distributions in the hollow space 29 on the 1st main plane of the plate 21, an inner electromagnet coil 24, an outer electromagnet coil 25, a central magnetic pole terminal 25, an inner magnetic pole terminal 27, and outer magnetic pole terminal 28 are provided. A shield 30 to serve as the anode is provided via an insulation spacer 31. When sputtering is effected by applying a high voltage power source, plasma rings are generated in the hollow space 29 over the plate 21. If at this time the operation of applying the thickness distributions of the formed films shown by curves 61, 62 is performed properly by changing the magnetic induction forces energized in the coils 24, 25, the synthesized films like a curve 63 distribute on a substrate 20 to be formed with films, whereby the uniform thickness of the formed films is obtained.
申请公布号 JPS583975(A) 申请公布日期 1983.01.10
申请号 JP19810099659 申请日期 1981.06.29
申请人 HITACHI SEISAKUSHO KK 发明人 KOBAYASHI SHIGERU;ABE KATSUO;KAMEI TSUNEAKI;TATEISHI HIDEKI;AIUCHI SUSUMU
分类号 C23C14/36;C23C14/35;H01J37/34 主分类号 C23C14/36
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