| 摘要 |
PURPOSE:To carry out a high speed operation and to increase the beta-property of an MOSFET without loss of transistor characteristics by insulating source, drain and channel regions from the peripheries. CONSTITUTION:A p<-> type silicon single crystal region 33 to become a channel region is formed on a p<+> type silicon single crystal region 32 on a substrate 31, insulating regions 34, 33 with SiO2 exist on the substrate 31 at both sides of the region 32, and n<+> type diffused regions 36, 37 of source and drain regions are formed at both sides of the region 33 on the regions 34, 35. The surfaces of the ends of the regions and the surface of the region 33 are covered with a gate insulating film 38, and a gate electrode 39 is formed thereon. According to this structure, a source region 36, a drain region 37 and a channel region 33 are electrically isolated from the substrate 31, thereby performing a high speed operation. |
