| 摘要 |
PURPOSE:To raise the sensitivity of a thyristor without deteriorating the turn-off characteristic by connecting a resistor and a capacitor in parallel with each other between an electrode formed on a base layer between a main thyristor and a pilot thyristor and an emitter electrode of the pilot thyristor. CONSTITUTION:An electrode 12 is formed on a P type base layer 3 between a main thyristor 4 and a pilot thyristor. A resistor 13 and a capacictor 14 are connected in parallel with each other between the electrode 12 and the emitter region 8 of the pilot thyristor as a turn-off current bypass circuit. In this manner, the gate sensitivity can be improved without deteriorating the turn-off characteristic of the main thyristor and the di/dt withstand value can be increased. |
