| 摘要 |
<p>PURPOSE:To use even a moisture sensitive member having the high impedance without any trouble, by forming a gate electrode of MOSFET with a water permeable substance and providing a moisture sensitive member between the electode and an insulating film. CONSTITUTION:A source dispersing layer 1 and a drain dispersing layer 2 are formed on a semiconductor substrate 3. An insulating film 4 such as SiO2 is provided on the surface of the substrate 3 and a moisture sensitive member 5 such as Al2O3 and a water permeable gate electrode 6 are layered in turn on this film. As this moisture sensitive element is an active element to detect the moisture according to the change of electric current or voltage, it is connectable with a display device without using a measuring circuit completely or with using a simple measuring circuit. As the moisture sensitive member having the high impedance is also used without any trouble, the restiction concerning the selection of materials is eased remarkably.</p> |
