| 摘要 |
PURPOSE:To improve the margin for bubble magnetic domain transfer, by providing garnet layers having different Q factor on the surface of garnet support. CONSTITUTION:On a Gd3Ga5O12 substrate 1, a garnet layer 2 being a bubble support with larger Q factor and a garnet layer 3 with smaller Q factor are formed. A large sized bubble 4 and a small sized bubble 5 are formed. As to manufacture, a (110) Gd3Ga5O12 substrate is grown with the 1st layer of Y1.29 Tm1.48Bi0.23Fe1.36O12 garnet film with liquid phase epitaxial in the thickness of 3.20mum with the substrate rotating speed of 100rpm. When the 2nd layer, 2.1mum in film thickness is grown on the 1st layer by the substrate revolution of 10rpm. the Q factor of the 2nd layer is decreased to 2 in comparison with the Q factor, 7.8 of the 1st layer. |
