| 摘要 |
PURPOSE:To reduce the capacity of a memory cell and to increase the reading speed, by connecting a Schottky barrier diode between the base and the collector of a bipolar transistor. CONSTITUTION:A memory cell consists of a bipolar transistor TRQ and a Schottky barrier diode SBD connected between the base and the collector of the TRQ. The base-emitter area is opened before the writing is carried out and then short-circuited after the writing action. The forward voltage of a diode SBD is usually lower than the forward voltage of a junction diode Q. Thus the current flows almost through the diode SBD when such memory cell is selected and read out. As a result, no current flows to the diode Q although a large current is flowed to the memory cell. Accordingly the dispersed capacity is small and can be ignored. As a result, the load of a word line can be reduced and the reading action is accelerated. |
