| 摘要 |
PURPOSE:To perfectly prevent the invasion of moisture from the outside before reaching an adhesion part between a barrier metal and semiconductor substrate for the improvement of moisture resistance, by covering the entire surface of the barrier metal with coating metal excellent in adhesiveness with an insulating film. CONSTITUTION:An N type epitaxial layer 12 is grown on an N<+> type semiconductor substrate 11 to form an SiO2 film 13 on this epitaxial layer 12. Next, the SiO2 film 13 is opened window to a fixed size for the evaporation of Mo 14 as the barrier metal on this window part and the SiO2 film 13 thereafter to remove the Mo 14 on the outer boundary of the SiO2 film 13. Next, the metal 15 with good adhesiveness to the SiO2 film 13 and strong resistance against reaction with water is attached to cover over the entire surface of the Mo 14. Thereafter, layers of Ni 16.Au 17 are formed on the coating metal 15, while layers Ti 18.Ni 19 and Au 20 are formed on the other main surface of the semiconductor substrate 1 with electrode leads connected to both main surfaces. |
