| 摘要 |
PURPOSE:To convert even a relatively large-sized non-single-crystalline layer into a single crystal with well uniformalized face orientation by setting a nucleus for single crystallization formed on an insulating substrate at a peripheral edge part of the non-single-crystalline layer and by causing the single crystallization of the layer. CONSTITUTION:A non-single-crystalline pattern region B superposed partially on a peripheral edge part of a predetermined region A on an insulating substrate is formed, and the region B is single-crystallized with energy beams. The single- crystallized region is formed so that it is partially superposed on a peripheral edge part of the region A. A non-single-crystalline layer is then formed on the region A, and energy beams are applied to the region B to cause the single crystallization of the layer. |
