| 摘要 |
PURPOSE:To enable to possess together both merits of a semiconductor material and a metal compound of the semiconductor thereof as the wiring material at a semiconductor device by a method wherein the continuous wiring of the same layer is provided wherein the prescribed part thereof is formed of the semiconductor material, and the other part is formed of the metal compound of the semiconductor material mentioned above. CONSTITUTION:Besides a wiring pattern 6 containing a gate electrode 61 and the extended part 62 thereof, a wiring pattern 6' made to come in contact directly with the impurity region 9 of a p channel element is formed. The direct contact part 61' of the pattern 6' thereof is formed of polycrystalline Si, and the other part 62' is formed of molibdenum silicide. Because majority of the pattern 6' is formed of molybdenum silicide, resistance is small, and delay of operating speed of the device is not generated. Moreover because the direct contact part 61' is formed of polycrystalline Si, favorable ohmic connection can be obtained between the p<+> type impurity region 9. |
