| 摘要 |
PURPOSE:To eliminate the problem due to overcontact of a semiconductor device and a photo etching mask, by providing a film formed with holes or grooves having sections in concave lens forms on the field of the pad periphery of the semiconductor device. CONSTITUTION:The Si oxide film 6 and photo resist 3 having holes or grooves in concave lens forms are formed on the Si semiconductor substrate 5 with the photo etching mask substrate 1 having a light shielding film pattern 2 provided thereon. In such a constitution, even when contact aligners contact the semiconductor substrate and photo etching mask as illustrated, holes or grooves in concave lens forms on the semiconductor substrate do not cause overcontact owing to the reduction of contact areas. |
