| 摘要 |
PURPOSE:To provide lead wires of high corrosion resistance and weld strength by using a low concn. oxygen-contg. iron-nickel alloy wire of a specific compsn. coated with copper for the lead wires to be joined by welding to a semiconductor binding chip consisting of Mo or W. CONSTITUTION:Lead wires 1, 1' are a composite wire 2 wherein an iron-nickel alloy consisting of, by weight %, 30-55% Ni, 0.01-0.3% Si, 0.01-1% Mn, and the balance iron is used as a core wire 7, and the outside circumference thereof is coated with copper 8 of 20-60% based on the weight of the wire 7. The amt. of oxygen contained in the wire 7 is <=30ppm. When a semiconductor binding chip 3 consisting of Mo or W is joined by welding to one end of the wire 2, the lead wires 1, 1' are joined to both terminals of a semiconductor element 5. The circumference thereof is sealed with sealing glass 6. The reliability of the semiconductor device is improved and the cost of its production is reduced. |
