发明名称 MASK FOR LASER ANNEALING
摘要 PURPOSE:To execute laser annealing minutely by using the mask of a transparent body, the surface thereof has unevenness with an inclined plane. CONSTITUTION:The[1,000]face of a crystal sheet 24 is etched by the saturated aqueous solution of ammonium difluoride, and a[10-10]face is formed. In this case, a groove 25 takes the equilateral triangle of 30mum length and 5mum one side, and a groove 26 takes the trapezoid of 10mum bottom and 30mum length. When the mask 3 formed in this manner is opposed to laser beams such as Na- YAG laser beams 5, reflection, refraction and interference are generated by a groove 22 and a projection 23, mask action is generated to the laser beams, and selective annealing can be conducted with high accuracy. The grooves and the unevenness are shaped to both surfaces, and an arbitraty pattern is formed. According to this constitution, the yield and performance of a semiconductor element can be improved.
申请公布号 JPS58133(A) 申请公布日期 1983.01.05
申请号 JP19810098847 申请日期 1981.06.25
申请人 TOKYO SHIBAURA DENKI KK 发明人 ABE MASAYASU;AOYAMA MASAHARU;OOSHIMA JIROU;YASUJIMA TAKASHI
分类号 H01L21/268 主分类号 H01L21/268
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