| 摘要 |
<p>PURPOSE:To extinguish the cut part effectively, by a method wherein wiring is made of such a metallic material as Mo or W in a memory adapted to program by cutting a bit wire or word wiring, the part excepting the cut one is of silicide, and the energy ray is applied to only the cut part to be oxidized and sublimated. CONSTITUTION:A bit wire or word wire 2 is deposited by evaporation on an SiO2 layer 1 which is a foundation on the order of 1,000Angstrom thick using such a metallic material as Mo or W, and a polycrystalline si layer 3, about 2,000Angstrom thick is piled up thereon by CVD method. Then, a hole is opened in the layer 3 corresponding to cut parts 5, 5' in order to conduct programming these wires, and a PSG film 4 is provided on the whole surface including the same. After that, the substrate is annealed for about half an hour at 900 deg.C for changing the wiring 2 located under the layer 3 into a silicide wiring 2', and a window is opened in the film 4 corresponding to the cut part 5, and a laser beam L is applied to the exposed part 5 in the air so that the part 5 will be oxidized and sublimated.</p> |
