Integrated circuit containing a semiconductive substrate having field isolation regions and electrically conductive regions.

摘要

An integrated circuit in the form of a MOSFET device contains a refractory metallic silicide (9) beneath a field isolation region (10) and in electrical contact with electrical conductive regions (P) of active impurity dopants in a semiconductive substrate (21).

The layer of silicide (9) is fabricated by depositing refractory metal and reacting it with the substrate beneath by heat or ion implantation.