| 摘要 |
PURPOSE:To form the minute pattern easily by shaping a section to be removed through etching by a positive resist pattern picture and coating the exposed section of the quality of a residual material with a negative resist picture. CONSTITUTION:A positive resist 2 is applied onto the quality of the material to be etched 5 of a substrate 1. An exposure process is conducted by using a mask 3. The resist pattern pictures 4 are obtained through development. The negative resist 6 is further applied onto the pictures 4. The pictures 4 are aligned by using the mask 3 or a mask, which is similar to the mask 3 and is slightly smaller than the mask 3, and the resist 6 is exposed. The negative resist pictures 7 and the pictures 4 are made exist in mixed form through development. The pictures 4 are dissolved and removed during negative development or thereafter by selecting a proper solvent, and the pictures 7 are left. The section of the quality of the material 5 is etched, and the predetermined pattern 5a is obtained. The substrate 1 on which the pattern as an object is shaped completely is acquired by removing and washing the pictures 7. Accordingly, the merits of both positive and negative types can be utilized. |
