METHOD OF FORMING AN IMPROVED SOLDER INTERCONNECTION BETWEEN A SEMICONDUCTOR DEVICE AND A SUPPORTING SUBSTRATE

摘要

METHOD OF FORMING AN IMPROVED SOLDER INTERCONNECTION BETWEEN A SEMICONDUCTOR DEVICE AND A SUPPORTING SUBSTRATE A ball limiting metallurgy pad structure for a semiconductor device solder bond interconnection comprises a conductive layer that is adherent to the semiconductor device passivating layer, a relatively thick layer of a material that has a high thermal conductivity, a barrier layer that protects the high conductivity layer by physically preventing it from interacting or alloying with any subsequent layers, and a layer of a material that is solder wettable.