| 摘要 |
An apertured masking layer (14) is disposed on the surface (12) of a substrate (10), and an epitaxial layer (20) is then grown by a depositing/etching cycle. By performing the depositing/ etching cycle a predetermined number of times, monocrystalline silicon (20) will he grown from the surface (18) of the substrate (10), through the aperture (16) in the mask (14), and over the masking layer (14). The etching removes any polycrystalline deposits. <IMAGE> |
