| 摘要 |
PURPOSE:To make longer the mean free path and scattering time of the electrons of two-dimensional electron gas and to make larger the mobility by a method wherein a lateral modulation doped layer and a buffer layer have a second boundary surface and a channel is formed at the region to come into contact to the first boundary surface in an active layer. CONSTITUTION:An active layer 4 consisting of a first semiconductor near an intrinsic semiconductor and a buffer layer 6 consisting of a second semiconductor having a forbidden band width wider than that of the first semiconductor and near an intrinsic semiconductor have a first boundary surface, a lateral modulation doped layer 10 of a constitution, wherein doped layers 7 consisting of a third semiconductor obtainable by doping an N-type impurity to the second semiconductor and non-doped layers 9 consisting of the second semiconductor near an intrinsic semiconductor are disposed alternately and periodically along the first boundary surface, and the buffer layer 6 have a second boundary surface and a channel 5 is formed at the region to come into contact to the first boundary surface in the active layer 4. Thereby, the channel 5 is not subjected to the effect of the turbulance of crystallizability of the interface of the superlattice layer because the channel does not come into contact to the interface of the superlattice by the interposition of the buffer layer 6, the mean free path and scattering time of the two-dimensional electron gas become longer and the mobility can be made longer. |
