| 摘要 |
PURPOSE:To reduce the image defects by preventing the local film quality deterioration of an amorphous silicon from occurring by a method wherein the space between picture element electrodes on the surface of a circuit substrate is isolated by insulating layers. CONSTITUTION:The first N<+> type impurity layer 2, the second N<+> type impurity layers 31, 32 and the third P<+> type impurity layers 41, 42 are formed on the surface of a P-type silicon substrate 1 while gate electrode 71, 72 and 81, 82 are formed in insulating films 61, 62. Next, the fourth N<++> type impurity layer 5 is formed by ion implantation; the first electrodes 91, 92 are formed; the other insulating films 101, 102 are formed on the first electrodes 91, 92 to make an opening; the insulating films 101, 102 are coated with polycrystalline polysilicon 11 to be moderately doped with P and further coated with Si3N4 by CVD process; and after coating with a resist 13, resist patterns of the second electrodes 111, 112 are formed; and after etching the Si3N4 12 by RIE process, the resist 13 is removed. Next, the polycrystalline polysilicon layer 11 is selectively oxidized by thermal oxidation using the Si3N4 12 as a mask; the Si3N4 12 is removed; an H type amorphous silicon alpha-Si:H 15 is formed and then an ITO electrode 16 is formed. |
