| 摘要 |
PURPOSE:To prevent occurrence of cracks due to the needle pressure of a metallic probe at the time of characteristic inspection and short circuits between a bonding pad and a semiconductor substrate and to enhance the yield rate of products and reliability, by forming an insulating protecting film at a part separated from the bonding pad. CONSTITUTION:An insulating protecting film 1 comprising an oxide film and a nitride film is formed on a metallic film at a part separated by a distance (d). It is desirable that the distance (d) is slightly larger than the diameter of the tip of a metallic probe, which is contacted with a the bonding pad 2 in the inspecting process of a semiconductor device. Even if the metallic probe of a prober is positioned on the bonding pad 2 and slipped laterally in the inspecting process of the semiconductor device, the tip of the metallic probe is stopped at a side wall 6 of the insulating protecting film 1, which is separated from the bonding pad 2. Therefore, even if cracks occur in an insulating film 3 beneath the stopped position, the short circuit between the bonding pad 2 and a semiconductor substrate 4 is avoided by migration, which is yielded in the bonding pad 2. |
