| 摘要 |
<p>PURPOSE:To implement high density and high resolution, by forming a switching circuit, which controls a control electrode at a desired voltage on a layer, which is different from a semiconductor transistor and a capacitor. CONSTITUTION:An epitaxial layer 103 is formed on an n-type substrate 101. A P-type base region 104 and an n<+> type emitter region are formed. An insulating layer 107 is provided on the layer 103. A capacitor electrode 109 is provided thereon so as to face the region 104. Such a TR is made to be a lower layer. An insulating layer 113 of SiO2 and the like are provided thereon. An n-type single crystal Si layer 114 is formed in a recess part of the layer 113 by a single crystal growing method. A gate oxide film, a gate electrode 108 and source/drain regions are constituted on the Si layer 114, and an MOSTR 115 is formed. Then, the TR is turned ON by refreshing operation. The electric charge in the region 104 is removed through the electrode, which is grounded through an interconnection 116 and the TR 115. Thus, the device can be readily miniaturized even if the number of terminals is charge.</p> |
