| 摘要 |
An optically activatable semiconductor component having at least one light-sensitive surface area containing a light-sensitive PN junction which is biased in a nonconducting direction when exposed to light, wherein in order to avoid a reduction in the inhibiting voltage of the optically activatable semiconductor component, the light-sensitive PN junction leading to the light-sensitive surface of the component is shaped such that it has a simple, preferably circular or tubular form at the light-sensitive surface. In one embodiment, plural light-sensitive PN junctions extend to the light-sensitive surface defining several subareas. The technology is applicable to thyristors, diodes, transistors or other light-sensitive semiconductor components.
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