发明名称 FORMATION OF THIN FILM
摘要 PURPOSE:To form a thin film having fine irregularity on the surface of a material to be protected, by mixing an auxiliary solution excellent in compatibility with a main solution and dissimilar in chemical properties, etc., to the main solution with the main solution and by removing, by separation, several components from a thin film formed by the use of the above mixed solution at the time of forming a thin film on the material to be protected. CONSTITUTION:The main solution is applied to the material to be protected, which is dried and burnt to form the thin film on the surface of the material to be protected. At this time, the thin film formation is carried out by previously mixing the auxiliary solution (e.g., ethyl acetate solution of poly methyl methacrylate) compatible with the main solution (e.g., alkyl-compound solution containing silicon atoms) and dissimilar in chemical or physical properties to the main solution with the main solution. Subsequently, by taking advantage of the differences in chemical or physical properties, some components (e.g., poly methyl methacrylate) in the solution are removed by separation. In this way, the thin film having a structure of fine irregularity, etc., can be formed in a thin-film condition of a hundreds Angstrom level on the surface.
申请公布号 JPS63105971(A) 申请公布日期 1988.05.11
申请号 JP19860251206 申请日期 1986.10.22
申请人 FUJI ELECTRIC CO LTD 发明人 KOSHO NOBORU
分类号 C09D133/12;C23C18/12;G11B5/72 主分类号 C09D133/12
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